U1H1L5N2D
|
Dual-Half Bridge and Dual-NMOS IPM内置高压半桥驱动和2路NMOS的IPM模块
|
HIN+, LIN+高侧高有效，低侧高有效
|
600V |
5A |
1500 |
4.8/4.6 |
4.8/4.6 |
QFN10-5*6 |
| U1H1L3N2D |
Dual-Half Bridge and Dual-NMOS IPM内置高压半桥驱动和2路NMOS的IPM模块
|
HIN+, LIN+高侧高有效，低侧高有效
|
600V |
3A |
2000 |
4.8/4.6 |
4.8/4.6 |
DIP8 |
| U6N6ADIP26P |
Full Bridge 6RC-IGBT IPM 内置高压3个半桥驱动,6个RC-IGBT |
HIN+, LIN+高侧高有效，低侧高有效 |
600V |
6A |
|
9/9.2 |
9/9.2 |
DIP26FP |
| U6N10ADIP26P |
Full Bridge 6RC-IGBT IPM 内置高压3个半桥驱动,6个RC-IGBT |
HIN+, LIN+高侧高有效，低侧高有效 |
600V |
10A |
|
9/9.2 |
9/9.2 |
DIP26FP |
| U6N15ADIP25 |
Full Bridge 6-IGBT IPM 内置高压3个半桥驱动,6个IGBT |
HIN+, LIN+高侧高有效，低侧高有效 |
600V |
15A |
|
9/9.2 |
9/9.2 |
DIP25 |
| U6N20ADIP25 |
Full Bridge 6-IGBT IPM 内置高压3个半桥驱动,6个IGBT |
HIN+, LIN+高侧高有效，低侧高有效 |
600V |
20A |
|
9/9.2 |
9/9.2 |
DIP25 |
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